HAT1038R_15 Datasheet, PDF (5/10 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1038R, HAT1038RJ
Main Characteristics
Power vs. Temperature Derating
4.0
Test Condition:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
3.0
2.0
1.0
1 _{Drive Operation}
0
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
–10
–10 V
–5 V
–8
–4 V
–3.5 V
Pulse Test
–6
–3 V
–4
–2
V_GS = –2.5 V
0
0
–2 –4 –6 –8 –10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–0.5
Pulse Test
–0.4
–0.3
I_D = –2 A
–0.2
–1 A
–0.1
–0.5 A
0
0
–4 –8 –12 –16 –20
Gate to Source Voltage V_GS (V)
REJ03G1150-0600 Rev.6.00 Aug 25, 2009
Page 3 of 7
Preliminary
Maximum Safe Operation Area
–100
–30
–10
–3
–1
–0.3
–0.1
10 μs
100 _μs
DC
Operation in
this area is
limited by R_DS
PW ^{1 ms}
Operation
(on)
= _{10 ms}
(PW _{≤ 1N0oste) 6}
–0.03 ^{Ta = 25°C}
1 shot pulse
–0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Drain to Source Voltage V_DS (V)
Note 6:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Typical Transfer Characteristics
–10
V_DS = 10 V
Pulse Test
–8
–6
–4
Tc = 75°C
25°C
–2
–25°C
0
0
–1 –2 –3 –4 –5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
0.2
0.1
0.05
V_GS = –4 V
–10 V
0.02
0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Drain Current I_D (A)