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HAT1038R_15 Datasheet, PDF (4/10 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching | |||
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HAT1038R, HAT1038RJ
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source leak voltage
Gate to source leak current
Zero gate voltage drain HAT1038R
current
HAT1038RJ
Zero gate voltage drain HAT1038R
current
HAT1038RJ
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note: 5. Pulse test
Preliminary
Symbol
V (BR) DSS
V (BR) GSS
IGSS
IDSS
IDSS
IDSS
IDSS
VGS (off)
RDS (on)
RDS (on)
|yfs|
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VDF
trr
Min
â60
±20
â
â
â
â
â
â1.2
â
â
3
â
â
â
â
â
â
â
â
â
Typ
â
â
â
â
â
â
â
â
0.12
0.16
4.5
600
290
75
11
30
100
55
â0.98
70
Max
â
â
±10
â1
â0.1
â
â10
â2.2
0.15
0.23
â
â
â
â
â
â
â
â
â1.28
â
Unit
V
V
μA
μA
μA
μA
μA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = â10 mA, VGS = 0
IG = ±100 μA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = â60 V, VGS = 0
VDS = â48 V, VGS = 0
Ta = 125°C
VDS = â10 V, ID = â1 mA
ID = â2 A, VGS = â10 V Note 5
ID = â2 A, VGS = â4 V Note 5
ID = â2 A, VDS = â10 V Note 5
VDS = â10 V
VGS = 0
f = 1 MHz
VGS = â10 V, ID = â2 A,
VDD â
â30 V
IF = â3.5 A, VGS = 0 Note 5
IF = â3.5 A, VGS = 0
diF/dt = 50 A/μs
REJ03G1150-0600 Rev.6.00 Aug 25, 2009
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