HAF1008 Datasheet, PDF (7/11 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Series Power Switching

HAF1008(L), HAF1008(S)
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
-20
Shutdown Case Temperature vs.
Gate to Source Voltage
200
-15
-10
V DD= -24 V
-5
-16 V
0
100 µ
1m
10 m
Shutdown Time of Load-Short Test
Pw (S)
180
160
140
120
I _D = -5 A
100
0
-2
-4
-6
-8 -10
Gate to Source Voltage V_GS (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
1
0.5
Tc = 25°C
0.3
0.2
0.1
0.1
0.05
0.02
0.03
0.01
1shot
pulse
0.01
10 µ
100 µ
θch - c(t) = γs (t) • θch - c
θch - c = 2.50°C/W, Tc = 25°C
PDM
PW
T
D=
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (S)
Rev.1.00, May.13.2003, page 7 of 11