HAF1008 Datasheet, PDF (5/11 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Series Power Switching

HAF1008(L), HAF1008(S)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
-1
Pulse Test
-0.8
-0.6
I _D = -10 A
-0.4
-5 A
-0.2
0
-2
-4
-6
-8 -10
Gate to Source Voltage VGS (V)
Static Drain to Source Sate Resistance
vs. Drain Current
200
Pulse Test
100
V_GS = -4 V
50
-10 V
20
10
-0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50
Drain Current I_D (A)
Static Drain to Source on State Resistance
vs. Temperature
100
Pulse Test I _D = -10 A
80
V_GS = -4 V
60
-5 A
-10 A
-5 A
40
-10 V
20
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
50
V _DS = -10 V
Pulse Test
20
Tc = -25°C
10
5
25°C
75°C
2
1
0.5
-0.1 -0.2 -0.5 -1 -2
-5 -10 -20 -50
Drain Current I_D (A)
Rev.1.00, May.13.2003, page 5 of 11