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HAF1008 Datasheet, PDF (2/11 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Series Power Switching | |||
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HAF1008(L), HAF1008(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID (pulse) Note1
Body-drain diode reverse drain IDR
current
Channel dissipation
PchNote2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ⤠10µs, duty cycle ⤠1 %
2. Value at Tc = 25°C
Ratings
â60
â16
2.5
â20
â40
â20
50
150
â55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
Typical Operation Characteristics
(Ta = 25°C)
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Symbol Min
VIH
VIL
IIH1
IIH2
IIL
IIH(sd)1
IIH(sd)2
Tsd
â3.5
â
â
â
â
â
â
â
Vop
â3.5
Typ
Max
Unit
â
â
V
â
â1.2
V
â
â100 µA
â
â50
µA
â
â1
µA
â0.8
â
mA
â0.35 â
mA
175
â
°C
â
â12
V
Test Conditions
Vi = â8 V, VDS = 0
Vi = â3.5 V, VDS = 0
Vi = â1.2 V, VDS = 0
Vi = â8 V, VDS = 0
Vi = â3.5 V, VDS = 0
Channel temperature
Rev.1.00, May.13.2003, page 2 of 11
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