HAF1008 Datasheet, PDF (3/11 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Series Power Switching

HAF1008(L), HAF1008(S)
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit Test Conditions
Drain current
I_D1
–7
—
Drain current
I_D2
—
—
Drain to source breakdown V_(BR)DSS –60
—
voltage
—
A
V_GS = –3.5 V, V_DS = –2 V
–10
mA
V_GS = –1.2 V, V_DS = –2 V
—
V
I_D = –10 mA, V_GS = 0
Gate to source breakdown V_(BR)GSS –16
—
—
V
I_G = –800 µA, V_DS = 0
voltage
Gate to source breakdown V_(BR)GSS 2.5
—
—
V
I_G = 100 µA, V_DS = 0
voltage
Gate to source leak current
Input current (shut down)
Zero gate voltage drain
current
I_GSS1
—
I_GSS2
—
I_GSS3
—
I_GSS4
—
I_GS(OP)1 —
I_GS(OP)2 —
I_DSS
—
—
–100 µA
—
–50 µA
—
–1
µA
—
100 µA
–0.8 —
mA
–0.35 —
mA
—
–10 µA
V_GS = –8 V, V_DS = 0
V_GS = –3.5 V, V_DS = 0
V_GS = –1.2 V, V_DS = 0
V_GS = 2.4 V, V_DS = 0
V_GS = –8 V, V_DS = 0
V_GS = –3.5 V, V_DS = 0
V_DS = –60 V, V_GS = 0
Gate to source cutoff voltage V_GS(off)
Forward transfer admittance |y_fs|
Static drain to source on state R_DS(on)
resistance
R_DS(on)
Output capacitance
Coss
Turn-on delay time
td(on)
Rise time
tr
–1.1
10
—
—
—
—
—
—
18.5
60
42
865
5.7
26
–2.15 V
—
S
80
mΩ
54
mΩ
―
pF
―
µs
—
µs
V_DS = –10 V, I_D = –1 mA
I_D = –10 A, V_DS = –10 V ^Note3
I_D = –10 A, V_GS = –4 V ^Note3
I_D = –10 A, V_GS = –10 V ^Note3
V_DS = –10 V, V_GS = 0, f = 1 MHz
V_GS = -10 V, I_D= –10 A, R_L = 3 Ω
Turn-off delay time
td(off) —
6.5
―
µs
Fall time
tf
—
9
—
µs
Body–drain diode forward V_DF
—
-0.9 —
V
I_F = –20 A, V_GS = 0
voltage
Body–drain diode reverse trr
—
100 —
ns
I_F = –20 A, V_GS = 0
recovery time
diF/dt = 50A/µs
Over load shut down
operation time ^Note4
t_os1
—
t_os2
—
1.84 —
1
—
ms
V_GS = –5 V, V_DD = –16 V
ms
V_GS = –5 V, V_DD = –24 V
Notes: 3. Pulse test
4. Include the time shift based on increasing of channel temperature when operate under over load
condition.
Rev.1.00, May.13.2003, page 3 of 11