2SC5754_15 Datasheet, PDF (7/15 Pages) Renesas Technology Corp – NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)

GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
25
VCE = 3 V
f = 0.5 GHz
20
15
10
5
0
1
10
100
1 000
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20 _{VCE = 3 V}
f = 1 GHz
MSG
MAG
15
|S21e|²
10
5
0
1
10
100
1 000
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20 _{VCE = 3 V}
f = 2.5 GHz
15
10 ^MSG
MAG
5
|S21e|²
0
1
10
100
1 000
Collector Current IC (mA)
2SC5754
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
30
MSG
VCE = 3 V
IC = 100 mA
25
MAG
20
15
10
5
|S21e|²
0
0.1
1
10
Frequency f (GHz)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20 _{VCE = 3 V}
f = 2 GHz
15
MSG
MAG
10
5
|S21e|²
0
1
10
100
1 000
Collector Current IC (mA)
Data Sheet PU10008EJ02V0DS
5