2SC5754_15 Datasheet, PDF (12/15 Pages) Renesas Technology Corp – NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)

2SC5754
EXAMPLE OF CHARACTERISTICS FOR 1.8 GHz PA EVALUATION BOARD
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
30
300
VCE = 3.2 V, f = 1.8 GHz
ICq = 4 mA, 1/2 Duty
25
250
Pout
20
200
IC
15
150
10 GP
100
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
30
300
VCE = 3.2 V, f = 1.8 GHz
ICq = 20 mA, 1/2 Duty
25
250
20
15
GP
Pout
200
IC
150
10
100
5
0
–10 –5
0
50
ηC
0
5
10 15 20
Input Power Pin (dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
30
300
VCE = 3.6 V, f = 1.8 GHz
ICq = 4 mA, 1/2 Duty
25
250
Pout
20
200
IC
15
150
10 ^GP
100
5
0
–10 –5
0
ηC
5
10 15
Input Power Pin (dBm)
50
0
20
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
30
300
VCE = 3.6 V, f = 1.8 GHz
ICq = 20 mA, 1/2 Duty
25
250
Pout
20
200
IC
15
150
GP
10
100
5
0
–10 –5
0
50
ηC
0
5
10 15 20
Input Power Pin (dBm)
5
0
–10 –5
0
ηC
5
10 15
Input Power Pin (dBm)
50
0
20
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.csd-nec.com/
10
Data Sheet PU10008EJ02V0DS