2SC5754_15 Datasheet, PDF (6/15 Pages) Renesas Technology Corp – NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)

2SC5754
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C)
1 000
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Mounted on Polyimide PCB
800 _{(38 × 38 mm, t = 0.4 mm)}
735
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
2.0
f = 1 MHz
1.5
600
1.0
400
Stand alone device
in free air
205
0.5
200
0
25 50 75 100 125 150
Ambient Temperature TA (˚C)
1 000
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
VCE = 3 V
100
10
1
0.1
0.01
0.001
0.5
1 000
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage VBE (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 3 V
0
1
2
3
4
5
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
450
IB : 0.5 mA step
400
7 mA
350
6 mA
300
5 mA
250
4 mA
200
3 mA
150
2 mA
100
1 mA
50
IB = 0.5 mA
0
1
2
3
4
5
6
Collector to Emitter Voltage VCE (V)
100
10
1
10
100
1 000
Collector Current IC (mA)
4
Data Sheet PU10008EJ02V0DS