2SC5754_15 Datasheet, PDF (5/15 Pages) Renesas Technology Corp – NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)

2SC5754
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
Symbol
Test Conditions
DC Characteristics
Collector Cut-off Current
ICBO VCB = 5 V, IE = 0 mA
Emitter Cut-off Current
DC Current Gain
IEBO
h ^{Note 1}
FE
VBE = 1 V, IC = 0 mA
VCE = 3 V, IC = 100 mA
RF Characteristics
Gain Bandwidth Product
fT
VCE = 3 V, IC = 100 mA, f = 0.5 GHz
Insertion Power Gain
S21e² VCE = 3 V, IC = 100 mA, f = 2 GHz
Reverse Transfer Capacitance
C Note 2
re
VCB = 3 V, IE = 0 mA, f = 1 MHz
Maximum Available Power Gain
MAG ^Note3 VCE = 3 V, IC = 100 mA, f = 2 GHz
Linear Gain
GL
VCE = 3.6 V, ICq = 20 mA, f = 1.8 GHz,
Pin = 0 dBm, 1/2 Duty
Gain 1 dB Compression Output Power PO (1 dB) ^{VCE = 3.6 V, ICq = 4 mA, f = 1.8 GHz,}
Pin = 15 dBm, 1/2 Duty
Collector Efficiency
ηC
VCE = 3.6 V, ICq = 4 mA, f = 1.8 GHz,
Pin = 15 dBm, 1/2 Duty
MIN.
−
−
40
16
5.0
−
−
−
−
−
TYP.
−
−
60
20
6.5
1.0
12.0
12.0
26.0
60
MAX.
1 000
1 000
100
−
−
1.5
−
−
−
−
Unit
nA
nA
−
GHz
dB
pF
dB
dB
dBm
%
Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
3. MAG = ^S21 (K – √ (K² – 1) )
S12
hFE CLASSIFICATION
Rank
Marking
hFE Value
FB
R57
40 to 100
Data Sheet PU10008EJ02V0DS
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