2SC5702 Datasheet, PDF (7/15 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial High Frequency Amplifier / Oscillator

2SC5702
S11 Parameter vs. Frequency
.8 ¹
.6
.4
.2
1.5
2
3
4
5
10
0
.2 .4 .6 .8 1 1.5 2 3 4 5 10
−10
−.2
−5
−4
−3
−.4
−2
−.6
−.8 _−1
−1.5
Condition : V_CE = 3 V, Zo = 50 Ω
100 to 2000 MHz (100 MHz STEP)
(I_C = 5mA)
(I_C = 20mA)
S21 Paramter vs. Frequency
90° ^{Scale: 10 / div.}
120°
60°
150°
30°
180°
0°
−150°
−30°
−120°
−90°
−60°
Condition : V_CE = 3 V, Zo = 50 Ω
100 to 2000 MHz (100 MHz STEP)
(I_C = 5mA)
(I_C = 20mA)
S12 Parameter vs. Frequency
90° ^{Scale: 10 / div.}
120°
60°
150°
30°
180°
0°
−150°
−30°
−120°
−90°
−60°
Condition : V_CE = 3 V, Zo = 50 Ω
100 to 2000 MHz (100 MHz STEP)
(I_C = 5mA)
(I_C = 20mA)
S21 Paramter vs. Frequency
.8 ¹
.6
.4
.2
1.5
2
3
4
5
10
0
.2 .4 .6 .8 1 1.5 2 3 4 5 10
−10
−.2
−.4
−.6
−.8 _−1
−5
−4
−3
−2
−1.5
Condition : V_CE = 3 V, Zo = 50 Ω
100 to 2000 MHz (100 MHz STEP)
(I_C = 5mA)
(I_C = 20mA)
Rev.2.00 Aug 10, 2005 page 7 of 14