2SC5702 Datasheet, PDF(2/15 Page) Hitachi Semiconductor – Silicon NPN Epitaxial High Frequency Amplifier / Oscillator

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2SC5702 Datasheet, PDF (2/15 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial High Frequency Amplifier / Oscillator

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2SC5702

Electrical Characteristics

Item

Collector to base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector output capacitance

Gain bandwidth product

Power gain

Noise figure

(Ta = 25Â°C)

Symbol Min Typ Max Unit

Test Conditions

V(BR)CBO

18.5

ï£§

V IC = 10 ÂµA, IE = 0

ICBO

ï£§

ÂµA VCB = 10 V, IE = 0

ICEO

ï£§

mA VCE = 4 V, RBE = â

IEBO

ï£§

mA VEB = 1.5V, IC = 0

hFE

80 120 160

VCE = 1 V, IC = 5 mA

Cob

ï£§ 0.85 1.2

pF VCB = 1 V, IE = 0

f = 1 MHz

6.5 8.0

ï£§

GHz VCE = 1 V, IC = 5 mA

f = 1 MHz

ï£§

dB VCE = 1 V, IC = 5 mA

f = 900 MHz

ï£§ 1.05 1.9

dB VCE = 1 V, IC = 5 mA

f = 900 MHz

Rev.2.00 Aug 10, 2005 page 2 of 14

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