2SC5702 Datasheet, PDF (4/15 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial High Frequency Amplifier / Oscillator

2SC5702
Collector Input Capacitance vs.
Emitter To Base Voltage
1.0
f = 1 MHz
0.8
0.6
0.4
0.2
0
0.1
1
10
Emitter to Base Voltage V_EB (V)
Noise Figure vs. Collector Current
5.0
f = 900 MHz
4.0
V_CE = 3 V
3.0
2V
1V
2.0
1.0
0.0
12
5 10 20 50 100
Collector Current I_C (mA)
S₂₁ Parameter vs. Collector Current
20
V_CE = 1 V
f = 1 GHz
16
12
8
4
0
12
5 10 20 50 100
Collector Current I_C (mA)
Power Gain vs. Collector Current
20
f = 900 MHz
16
V_CE = 3 V
2V
12
8
1V
4
0
12
5 10 20 50 100
Collector Current I_C (mA)
Gain Bandwidth Product vs. Collector Currnet
20
V_CE = 1 V
f = 1 GHz
16
12
8
4
0
12
5 10 20 50 100
Collector Current I_C (mA)
Rev.2.00 Aug 10, 2005 page 4 of 14