2SC5702 Datasheet, PDF (3/15 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial High Frequency Amplifier / Oscillator

2SC5702
Main Characteristics
Maximum Collector Dissipation Curve
160
120
80
40
0
50
100
150
200
Ambient Temperature Ta (°C)
Collecter Voltage vs.
Base to Emitter Voltege
50
V_CE = 1 V
40
30
20
10
0
0 0.2 0.4 _0.6 0.8 _1.0 1.2
Base to Emitter Voltage V_BE (V)
Collector Output Capacitance vs.
Collector to Base Voltage
1.4 _{IE = 0}
f = 1 MHz
1.2
1.0
0.8
0.6
0.4
0
1
10
Collector to Base Voltage V_CB (V)
Rev.2.00 Aug 10, 2005 page 3 of 14
Collecter Voltage vs.
Collecter to Emitter Voltege
50
460 µA
40
410 µA
360 µA
310 µA
260 µA
30
210 µA
160 µA
20
110 µA
10
60 µA
IB =10 µA
0
1
2
3
4
5
Collecter to Emitter Voltege V_CE (V)
DC Current Transfet Ratio vs.
Collector Current
200
160
120
80
40
0
12
5 10 20
50 100
Collector Current I_C (mA)
Reverse Transfer capacitance vs.
Collector To Base Voltage
1.0 _{E: Guard pin}
f = 1 MHz
0.8
0.6
0.4
0.2
0
0
1
10
Collector to Base Voltage V_CB (V)