H83024 Datasheet, PDF (667/841 Pages) Renesas Technology Corp – Renesas 16-Bit Single-Chip Microcomputer H8 Family/H8/300H Series

Section 21 Electrical Characteristics
21.2.6 Flash Memory Characteristics
Table 21.19 shows the flash memory characteristics.
Table 21.19 Flash Memory Characteristics
Conditions: V_CC = 3.0 to 3.6 V, AV_CC = 3.0 to 3.6 V, V_SS = AV_SS = 0 V,
T_a = 0°C to +75°C (operating temperature range for programming/erasing)
Item
Programming time^{*1 *2 *4}
Symbol
t_P
Erase time^{*1 *3 *5}
Reprogramming count
Data retention period
Programming Wait time after SWE bit setting^*1
Wait time after PSU bit setting^*1
Wait time after P bit setting^{*1 *4}
t_E
N_WEC
t_DRP
t_sswe
t_spsu
t_sp30
t_sp200
t_sp10
Erase
Wait time after P bit clear^*1
t_cp
Wait time after PSU bit clear^*1
t_cpsu
Wait time after PV bit setting^*1
t_spv
Wait time after H'FF dummy write^*1 t_spvr
Wait time after PV bit clear^*1
t_cpv
Wait time after SWE bit clear^*1
t_cswe
Maximum programming count^{*1 *4} N
Wait time after SWE bit setting^*1 t_sswe
Wait time after ESU bit setting^*1 t_sesu
Wait time after E bit setting^{*1 *5}
t_se
Wait time after E bit clear^*1
t_ce
Wait time after ESU bit clear^*1
t_cesu
Wait time after EV bit setting^*1
t_sev
Wait time after H'FF dummy write^*1 t_sevr
Wait time after EV bit clear^*1
t_cev
Wait time after SWE bit clear^*1
t_cswe
Maximum erase count^{*1 *5}
N
Min Typ Max
— 10 200
— 100 1200
100*⁶ 10,000*⁷—
10*⁸ —
—
1
1
—
50 50 —
28 30 32
198 200 202
8
10 12
5
5
—
5
5
—
4
4
—
2
2
—
2
2
—
100 100 —
— — 1000
1
1
—
100 100 —
10 10 100
10 10 —
10 10 —
20 20 —
2
2
—
4
4
—
100 100 —
12 — 120
Unit
Notes
ms/
128 bytes
ms/block
Times
Years
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
Times
µs
µs
ms
µs
µs
µs
µs
µs
µs
Times
Programming
time wait
Programming
time wait
Additional-
programming
time wait
Erase time
wait
Rev. 2.00 Sep 20, 2005 page 629 of 800
REJ09B0260-0200