RJH60V1BDPE_15 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – 600 V - 8 A - IGBT Application: Inverter

RJH60V1BDPE
Typical Capacitance vs.
Collector to Emitter Voltage
10000
1000
V_GE = 0 V
f = 1 MHz
Ta = 25°C
Cies
100
Coes
10
Cres
1
0 50 100 150 200 250 300
Collector to Emitter Voltage V_CE (V)
Reverse Recovery Time vs.
Diode Current Slope (Typical)
300
V_CC = 300 V
250
I_F = 8 A
200
150
100
Tc = 150°C
50
25°C
0
0
40 80 120 160 200
Diode Current Slope diF/dt (A/μs)
Reverse Recovery Current vs.
Diode Current Slope (Typical)
16
V_CC = 300 V
I_F = 8 A
12
8
Tc = 150°C
4
25°C
0
0
40 80 120 160 200
Diode Current Slope di_F/dt (A/μs)
Preliminary
Dynamic Input Characteristics (Typical)
800
V_CC = 300 V
I_C = 8 A
Tc = 25°C
600
16
V_GE
12
400
8
200
0
0
4
V_CE
4
8
0
12 16 20
Gate Charge Qg (nc)
Reverse Recovery Charge vs.
Diode Current Slope (Typical)
0.20
0.16
V_CC = 300 V
I_F = 8 A
0.12
0.08
Tc = 150°C
0.04
25°C
0
0
40 80 120 160 200
Diode Current Slope diF /dt (A/μs)
Forward Current vs. Forward Voltage (Typical)
40
V_GE = 0 V
Pulse Test
30
20
Tc = 150°C
10
25°C
0
0
1
2
3
4
C-E Diode Forward Voltage V_CEF (V)
R07DS0743EJ0200 Rev.2.00
May 25, 2011
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