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| RJH60V1BDPE_15 Datasheet, PDF (1/10 Pages) Renesas Technology Corp – 600 V - 8 A - IGBT Application: Inverter | |||
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Preliminary Datasheet
RJH60V1BDPE
600 V - 8 A - IGBT
Application: Inverter
R07DS0743EJ0200
Rev.2.00
May 25, 2011
Features
ï· Short circuit withstand time (6 ïs typ.)
ï· Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)
ï· Built in fast recovery diode (25 ns typ.) in one package
ï· Trench gate and thin wafer technology
ï· High speed switching
tf = 110 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 8 A, Rg = 5 ï, inductive load)
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
C
4
123
1. Gate
G
2. Collector
3. Emitter
4. Collector
E
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW ï£ 10 ïs, duty cycle ï£ 1%
2. Value at Tc = 25ï°C
Symbol
VCES / VR
VGES
IC
IC
ic(peak) Note1
iDF
iD(peak) Note1
PC Note2
ï±j-c Note2
ï±j-cd Note2
Tj
Tstg
Ratings
600
±30
16
8
32
8
32
52
2.38
1.75
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/ W
°C/ W
°C
°C
R07DS0743EJ0200 Rev.2.00
May 25, 2011
Page 1 of 9
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