RJH60V1BDPE_15 Datasheet, PDF (2/10 Pages) Renesas Technology Corp – 600 V - 8 A - IGBT Application: Inverter

RJH60V1BDPE
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ Max Unit
Test Conditions
Collector to emitter breakdown
voltage
V_(BR)CES
600
—
—
V I_C =10 A, V_GE = 0
Zero gate voltage collector current
I_CES / I_R
—
—
5
A V_CE = 600 V, V_GE = 0
/ Diode reverse current
Gate to emitter leak current
I_GES
—
—
±1
A V_GE = ±30 V, V_CE = 0
Gate to emitter cutoff voltage
V_GE(off)
5.5
Collector to emitter saturation voltage V_CE(sat)
—
V_CE(sat)
—
—
7.5
1.6
2.2
2.2
—
V
V_CE = 10 V, I_C = 1 mA
V
I_C = 8 A, V_GE = 15 V ^Note3
V
I_C =16 A, V_GE = 15 V ^Note3
Input capacitance
Cies
—
300
—
pF V_CE = 25 V
Output capacitance
Coes
—
27
—
pF
V_GE = 0
Reverse transfer capacitance
Cres
—
12
—
pF ^{f = 1 MHz}
Total gate charge
Gate to emitter charge
Gate to collector charge
Qg
—
19
—
nC V_GE = 15 V
Qge
—
3.5
—
nC ^VCE ^{= 300 V}
Qgc
—
11
—
nC ^{IC = 8 A}
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Short circuit withstand time
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_total
t_sc
—
30
—
—
12
—
—
55
—
—
110
—
—
0.017 —
—
0.11
—
—
0.13
—
3
6
—
ns V_CC = 300 V
ns ^VGE ^{= 15 V}
ns
I_C = 8 A
ns ^{Rg = 5 ï€} 
mJ ^{(Inductive load)}
mJ
mJ
s Tc = 100 C
V_GE  360 V, V_GE = 15 V
FRD Forward voltage
V_F
—
2.5
―
V
I_F = 8 A ^Note3
FRD reverse recovery time
FRD reverse recovery charge
t_rr
—
25
—
ns I_F = 8 A
Q_rr
—
0.01
—
C ^diF^{/dt = 100 A/s}
FRD peak reverse recovery current
I_rr
—
1.0
—
A
Notes: 3. Pulse test.
R07DS0743EJ0200 Rev.2.00
May 25, 2011
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