RJH60V1BDPE_15 Datasheet, PDF (4/10 Pages) Renesas Technology Corp – 600 V - 8 A - IGBT Application: Inverter

RJH60V1BDPE
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
5
Tc = 25°C
Pulse Test
4
3
I_C = 16 A
2
8A
1
8 10 12 14 16 18 20
Gate to Emitter Voltage V_GE (V)
Typical Transfer Characteristics
40
V_CE = 10 V
Pulse Test
30
Tc = 25°C
20
150°C
10
0
0
4
8
12 16 20
Gate to Emitter Voltage V_GE (V)
Gate to Emitter Cutoff Voltage
vs. Case Temparature (Typical)
10
8
I_C = 10 mA
6
1 mA
4
2
V_CE = 10 V
Pulse Test
0
−25 0 25 50
75 100 125 150
Case Temparature Tc (°C)
Preliminary
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
5
Tc = 150°C
Pulse Test
4
3
I_C = 16 A
2
8A
1
8 10 12 14 16 18 20
Gate to Emitter Voltage V_GE (V)
Collector to Emitter Saturation Voltage
vs. Case Temparature (Typical)
4.0
V_GE = 15 V
3.5 ^{Pulse Test}
3.0
I_C = 16 A
2.5
2.0
8A
1.5
1.0
−25 0 25 50 75 100 125 150
Case Temparature Tc (°C)
Frequency Characteristics (Typical)
8
6
0
Collector current wave
(Square wave)
4
2
Tj = 125°C, Tc = 90°C
V_CE = 400 V, V_GE = 15 V
Rg = 5 Ω, duty = 50%
0
1
10
100
Frequency f (kHz)
1000
R07DS0743EJ0200 Rev.2.00
May 25, 2011
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