RJH1CM6DPQ-E0_13 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – 1200V - 20A - IGBT Application: Inverter

RJH1CM6DPQ-E0
10000
1000
Typical Capacitance vs.
Collector to Emitter Voltage
Cies
100
Coes
10
V_GE = 0 V
f = 1 MHz
Cres
Tc = 25°C
1
0 50 100 150 200 250 300
Collector to Emitter Voltage V_CE (V)
1000
Reverse Recovery Time vs.
Diode Current Slope (Typical)
I_F = 20 A
800
600
400
Tc = 150°C
200
0
0
25°C
40 80 120 160 200
Diode Current Slope di_F/dt (A/μs)
Reverse Recovery Current vs.
Diode Current Slope (Typical)
30
I_F = 20 A
25
20
Tc = 150°C
15
10
25°C
5
0
0
40 80 120 160 200
Diode Current Slope diF/dt (A/μs)
Preliminary
Dynamic Input Characteristics (Typical)
800
I_C = 20 A
V_CC = 300 V
Tc = 25°C
600
16
V_GE
12
400
8
200
0
0
4
V_CE
0
20 40 60 80 100 120
Gate Charge Qg (nC)
Reverse Recovery Charge vs.
Diode Current Slope (Typical)
3.0
I_F = 20 A
2.5
2.0
Tc = 150°C
1.5
1.0
0.5
25°C
0
0
40 80 120 160 200
Diode Current Slope di_F/dt (A/μs)
Forward Current vs. Forward Voltage (Typical)
60
50
Tc = 25°C
40
150°C
30
20
10
V_CE = 0 V
Pulse Test
0
0
1
2
3
4
C-E Diode Forward Voltage V_CEF (V)
R07DS0521EJ0500 Rev.5.00
Jun 24, 2013
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