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RJH1CM6DPQ-E0_13 Datasheet, PDF (2/10 Pages) Renesas Technology Corp – 1200V - 20A - IGBT Application: Inverter | |||
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RJH1CM6DPQ-E0
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ Max Unit
Test Conditions
Zero gate voltage collector current
/ Diode reverse current
ICES/IR
â
â
5
μA VCE = 1200 V, VGE = 0
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reveres transfer capacitance
IGES
VGE(off)
VCE(sat)
VCE(sat)
Cies
Coes
Cres
â
â
±1
4.5
â
6.5
â
2.1
2.7
â
2.8
â
â
1600
â
â
85
â
â
45
â
μA VGE = ±30 V, VCE = 0
V
VCE = 10 V, IC = 1 mA
V
IC = 20 A, VGE = 15 V Note3
V
IC = 40 A, VGE = 15 V Note3
pF VCE = 25 V
pF VGE = 0
pF f = 1 MHz
Total gate charge
Gate to emitter charge
Gate to collector charge
Qg
â
105
â
nC VGE = 15 V
Qge
â
17.5
â
nC VCE = 300 V
Qgc
â
51
â
nC IC = 20 A
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Short circuit withstand time
td(on)
tr
td(off)
tf
Eon
Eoff
Etotal
tsc
â
45
â
ns VCC = 600 V
â
21
â
ns VGE = 15 V
â
120
â
ns IC = 20 A
â
120
â
ns Rg = 5 Ω
Inductive load
â
1.8
â
mJ
â
0.9
â
mJ
â
2.8
â
mJ
â
10
â
μs VCC ⤠720 V, VGE = 15 V
Tc ⤠125°C
FRD forward voltage
VF
â
1.7
â
V
IF = 20 A Note3
FRD reverse recovery time
FRD reverse recovery charge
trr
â
180
â
ns IF = 20 A
Qrr
â
0.62
â
μC diF/dt = 100 A/μs
FRD peak reverse recovery current
Irr
â
9.2
â
A
Notes: 3. Pulse test.
R07DS0521EJ0500 Rev.5.00
Jun 24, 2013
Page 2 of 9
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