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| RJH1CM6DPQ-E0_13 Datasheet, PDF (1/10 Pages) Renesas Technology Corp – 1200V - 20A - IGBT Application: Inverter | |||
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Preliminary Datasheet
RJH1CM6DPQ-E0
1200V - 20A - IGBT
Application: Inverter
R07DS0521EJ0500
Rev.5.00
Jun 24, 2013
Features
⢠Short circuit withstand time (10 μs typ.)
⢠Low collector to emitter saturation voltage
VCE(sat) = 2.1 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25°C)
⢠Built-in fast recovery diode (trr = 200 ns typ.) in one package
⢠Trench gate and thin wafer technology
⢠High speed switching
tf = 120 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 20 A, Rg = 5 Ω, Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0003ZE-A
(Package name: TO-247)
C
4
123
1. Gate
2. Collector
G
3. Emitter
4. Collector
E
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW ⤠10 μs, duty cycle ⤠1%
2. Value at Tc = 25°C
Symbol
VCES / VR
VGES
IC
IC
IC(peak) Note1
IDF
IDF(peak) Note1
PC Note2
θj-c Note2
θj-cd Note2
Tj
Tstg
Ratings
1200
±30
40
20
60
20
60
290
0.43
0.69
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/W
°C/W
°C
°C
R07DS0521EJ0500 Rev.5.00
Jun 24, 2013
Page 1 of 9
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