RJH1CM6DPQ-E0_13 Datasheet, PDF (4/10 Pages) Renesas Technology Corp – 1200V - 20A - IGBT Application: Inverter

RJH1CM6DPQ-E0
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
6
Tc = 25°C
Pulse Test
5
4
3
I_C = 40 A
2
20 A
1
6 8 10 12 14 16 18 20
Gate to Emitter Voltage V_GE (V)
Typical Transfer Characteristics
60
50
Tc = 25°C
40
150°C
30
20
10
V_CE = 10 V
Pulse Test
0
0
4
8
12 16 20
Gate to Emitter Voltage V_GE (V)
Gate to Emitter Cutoff Voltage
vs. Case Temparature (Typical)
10
8
6
I_C = 10 mA
4
1 mA
2
V_CE = 10 V
Pulse Test
0
−25 0 25 50
75 100 125 150
Case Temparature Tc (°C)
Preliminary
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
6
Tc = 150°C
Pulse Test
5
4
I_C = 40 A
3
20 A
2
1
6 8 10 12 14 16 18 20
Gate to Emitter Voltage V_GE (V)
Collector to Emitter Saturation Voltage
vs. Case Temparature (Typical)
5
V_GE = 15 V
Pulse Test
4
I_C = 40 A
3
20 A
2
10 A
1
−25 0 25 50 75 100 125 150
Case Temparature Tc (°C)
Frequency Characteristics (Typical)
20
16
0
Collector current wave
(Square wave)
12
8
Tj = 125°C
Tc = 90°C
4
V_CE = 400 V
V_GE = 15 V
Rg = 5 Ω
duty = 50%
0
1
10
100
Frequency f (kHz)
1000
R07DS0521EJ0500 Rev.5.00
Jun 24, 2013
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