NP90N03VHG_15 Datasheet, PDF (6/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP90N03VHG
Package Drawings (Unit: mm)
TO-252 (MP-3ZP) (Mass: 0.27 g TYP.)
6.5±0.2
5.1 TYP.
4.3 MIN.
4
Chapter Title
2.3±0.1
0.5±0.1
No Plating
1.13
12
3
1.14 MAX.
2.3 2.3
No Plating
0.76±0.12
0 to 0.25
0.5±0.1
1.0
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Equivalent Circuit
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against
ESD. When this device actually used, an additional protection circuit is externally required if a
voltage exceeding the rated voltage may be applied to this device.
R07DS0128EJ0100 Rev.1.00
Sep 24, 2010
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