NP90N03VHG_15 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP90N03VHG
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
400
300
200
100
0
0
0.2 0.4 0.6 0.8
VGS = 10 V
Pulsed
1 1.2 1.4
V_DS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE
vs. CHANNEL TEMPERATURE
5
4
3
2
1
VDS = VGS
ID = 250 μA
0
-75 -25 25 75 125 175 225
T_ch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
6
VGS = 10 V
5 ^Pulsed
4
3
2
1
0
1
10
100
1000
I_D - Drain Current - A
R07DS0128EJ0100 Rev.1.00
Sep 24, 2010
Chapter Title
FORWARD TRANSFER CHARACTERISTICS
1000
100
10 ^{Tch = −55°C}
−25°C
1
25°C
75°C
0.1
125°C
150°C
0.01
175°C
0.001
VDS = 10 V
0.0001
Pulsed
0
1
2
3
4
5
6
V_GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs. DRAIN
CURRENT
100
Tch = −55°C
−25°C
25°C
10
75°C
125°C
150°C
175°C
1
0.1
VDS = 5 V
Pulsed
1
10
100
I_D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
6
ID = 45 A
5
Pulsed
4
3
2
1
0
0
4
8
12
16
20
V_GS - Gate to Source Voltage - V
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