NP90N03VHG_15 Datasheet, PDF (5/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP90N03VHG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
6
VGS = 10 V
5 ^{ID = 45 A}
4
3
2
1
Pulsed
0
-75 -25 25 75 125 175 225
T_ch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
100
td( on)
td(of f )
10
tr
VDD = 15 V
VGS = 10 V
RG = 0 Ω
1
0.1
1
tf
10
100
I_D - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
10 _{VGS = 10 V}
0V
1
0.1
0.01
0.001
Pulsed
0
0.5
1
1.5
V_F(S-D) - Source to Drain Voltage - V
R07DS0128EJ0100 Rev.1.00
Sep 24, 2010
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
10000
Ciss
1000
VGS = 0 V
f = 1 MHz
100
0.01
0.1
Coss
Cr ss
1
10
100
V_DS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50
10
40
VDD = 24 V
15 V
8
6V
30
6
V GS
20
4
10
0
0
2
V DS
ID = 90 A
0
20
40
60
80 100
Q_G - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
VGS = 0 V
di/dt = 100 A/μs
10
0.1
1
10
100
I_F - Drain Current - A
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