NP20P06YLG_15 Datasheet, PDF (6/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP20P06YLG
Package Drawings (Unit: mm)
8-pin HSON (Mass: 0.13 g TYP.)
1, 2, 3: Source
4:
Gate
5, 6, 7, 8: Drain
Equivalent Circuit
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark: The diode connected betweeen the gate and source of the transisor serves as a protector against
EDS. When this device actually used, an additional protection circuit is externally required if a
voltage exceeding the rated voltage may be applied to this device.
R07DS0706EJ0100 Rev.1.00
Apr 17, 2012
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