NP20P06YLG_15 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

Preliminary Data Sheet
NP20P06YLG
MOS FIELD EFFECT TRANSISTOR
R07DS0706EJ0100
Rev.1.00
Apr 17, 2012
Description
The NP20P06YLG is P-channel MOS Field Effect Transistor designed for high current switching applications.
Features
 Low on-state resistance
R_DS(on) = 47 m MAX. (V_GS = –10 V, I_D = –10 A)
R_DS(on) = 64 m MAX. (V_GS = –5 V, I_D = –10 A)
R_DS(on) = 70 m MAX. (V_GS = –4.5 V, I_D = –10 A)
 Logic level drive type
 Gate to Source ESD protection diode built in
 Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
NP20P06YLG-E1-AY ^*1
NP20P06YLG-E2-AY ^*1
Lead Plating
Pure Sn (Tin)
Packing
Tape 2500 p/reel Taping (E1 type)
Taping (E2 type)
Note: *1 Pb-free (This product does not contain Pb in the external electrode)
Package
8-pin HSON
Absolute Maximum Ratings (T_A = 25°C)
Item
Drain to Source Voltage (V_GS = 0 V)
Gate to Source Voltage (V_DS = 0 V)
Drain Current (DC) (T_C = 25°C)
Drain Current (pulse) ^*1
Total Power Dissipation (T_C = 25°C)
Total Power Dissipation (T_A = 25°C) ^*2
Channel Temperature
Storage Temperature
Single Avalanche Current ^*3
Single Avalanche Energy ^*3
Symbol
V_DSS
V_GSS
I_D(DC)
I_D(pulse)
P_T1
P_T2
T_ch
T_stg
I_AS
E_AS
Ratings
–60
20
20
60
57
1.0
175
–55 to +175
17
29
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
R_th(ch-C)
Channel to Ambient Thermal Resistance ^*2 R_th(ch-A)
2.63
°C/W
150
°C/W
Notes: *1 T_C = 25°C, P_W  10 s, Duty Cycle  1%
*2 Mounted on glass epoxy substrate of 40 mm  40 mm  1.6 mmt with 4% copper area (35 m)
*3 T_ch(start) = 25°C, V_DD = –30 V, R_G = 25 , L = 100 H, V_GS = –20 V  0 V
R07DS0706EJ0100 Rev.1.00
Apr 17, 2012
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