NP20P06YLG_15 Datasheet, PDF (3/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP20P06YLG
Typical Characteristics (T_A = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
T_C - Case Temperature - °C
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175
T_C - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
–100
–10
RDS(ON) Limited
(V_GS=–10 V)
I_D(Pulse) = –60 A
I_D(DC) = –20 A
PW _{= 100 μs}
Power Dissipation Limited
–1
–0.1
Secondary Breakdown Limited
T_C = 25°C
Single Pulse
–0.01
–0.1
–1
–10
–100
V_DS - Drain to Source Voltage - V
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
R_th(ch-A) = 150°C/W
10
1
R_th(ch-C) = 2.63°C/W
0.1
Single pulse
Mounted on glass epoxy substrate of 40 mm × 40 mm × 1.6 mmt
with 4% copper area (35 μm)
0.01
100 μ
1m
10 m
100 m
1
10
100
PW - Pulse Width - s
1000
R07DS0706EJ0100 Rev.1.00
Apr 17, 2012
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