NP20P06YLG_15 Datasheet, PDF (2/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP20P06YLG
Electrical Characteristics (T_A = 25°C)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance ^*1
Drain to Source On-state Resistance ^*1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage ^*1
Reverse Recovery Time
Reverse Recovery Charge
Note: *1 Pulsed test
Symbol
I_DSS
I_GSS
V_GS(th)
| y_fs |
R_DS(on)1
R_DS(on)2
R_DS(on)3
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Q_G
Q_GS
Q_GD
V_F(S-D)
t_rr
Q_rr
MIN.
—
—
–1.0
9
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
TYP.
—
—
–1.7
20
37
41
43
1605
150
96
8
8
160
80
34
4
9
0.95
38
50
MAX.
–1
10
–2.5
—
47
64
70
2407
225
173
16
20
320
200
51
—
—
1.5
—
—
Unit
A
A
V
S
m
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Conditions
V_DS = –60 V, V_GS = 0 V
V_GS = 20 V, V_DS = 0 V
V_DS = V_GS, I_D = –250 A
V_DS = –5 V, I_D = –10 A
V_GS = –10 V, I_D = –10 A
V_GS = –5 V, I_D = –10 A
V_GS = –4.5 V, I_D = –10 A
V_DS = –25 V
V_GS = 0 V
f = 1 MHz
V_DD = –30 V, I_D = –10 A
V_GS = –10 V
R_G = 0 
V_DD = –48 V
V_GS = –10 V
I_D = –20 A
I_F = 20 A, V_GS = 0 V
I_F = 20 A, V_GS = 0 V
di/dt = 100 A/s
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R_G = 25 Ω
L
PG.
V_GS = –20 → 0 V
50 Ω
V_DD
–
I_AS ^BVDSS
I_D
V_DD
V_DS
Starting T_ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I_G = –2 mA
R_L
PG.
50 Ω
V_DD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
PG.
R_G
V_GS(–)
0
τ
τ = 1 μs
Duty Cycle ≤ 1%
R_L
V_GS(–)
V_GS
Wave Form
10%
0
V_DD
V_DS(–)
90%
V_DS
V_DS
0
Wave Form
t_d(on)
90%
V_GS
90%
10% 10%
t_r t_d(off)
t_f
t_on
t_off
R07DS0706EJ0100 Rev.1.00
Apr 17, 2012
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