NP20N10YDF_15 Datasheet, PDF (6/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP20N10YDF
Package Drawings (Unit: mm)
8-pin HSON (Mass: 0.13 g TYP.)
1, 2, 3: Source
4:
Gate
5, 6, 7, 8: Drain
Equivalent Circuit
Gate
Drain
Body
Diode
Source
Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred.
R07DS0705EJ0100 Rev.1.00
Apr 17, 2012
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