NP20N10YDF_15 Datasheet, PDF (3/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP20N10YDF
Typical Characteristics (T_A = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
T_C - Case Temperature - °C
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175
T_C - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
I_D(Pulse)
=
40
A
PW
RDS(ON) Limited
10 ^{(VGS=10 V) I}D(DC) ^{= 20 A}
= _{100 μs}
Power Dissipation Limited
1
Secondary Breakdown Limited
0.1
T_C = 25°C
Single Pulse
0.01
0.1
1
10
100
1000
V_DS - Drain to Source Voltage - V
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
R_th(ch-A) = 150°C/W
10
R_th(ch-C) = 2.46°C/W
1
0.1
Single pulse
Mounted on glass epoxy substrate of 40 mm × 40 mm × 1.6 mmt
with 4% copper area (35 μm)
0.01
100 μ
1m
10 m
100 m
1
10
100
PW - Pulse Width - s
1000
R07DS0705EJ0100 Rev.1.00
Apr 17, 2012
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