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NP20N10YDF_15 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
NP20N10YDF
MOS FIELD EFFECT TRANSISTOR
R07DS0705EJ0100
Rev.1.00
Apr 17, 2012
Description
The NP20N10YDF is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
 Low on-state resistance
RDS(on) = 55 m MAX. (VGS = 10 V, ID = 10 A)
RDS(on) = 68 m MAX. (VGS = 5 V, ID = 10 A)
RDS(on) = 74 m MAX. (VGS = 4.5 V, ID = 10 A)
 Low Ciss: Ciss = 1000 pF TYP. (VDS = 25 V, VGS = 0 V)
 Logic level drive type
 Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
NP20N10YDF-E1-AY *1
NP20N10YDF-E2-AY *1
Lead Plating
Pure Sn (Tin)
Packing
Tape 2500 p/reel Taping (E1 type)
Taping (E2 type)
Note: *1 Pb-free (This product does not contain Pb in the external electrode)
Package
8-pin HSON
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) *1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C) *2
Channel Temperature
Storage Temperature
Single Avalanche Current *3
Single Avalanche Energy *3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAS
EAS
Ratings
100
20
20
40
61
1.0
175
–55 to +175
16
26
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Rth(ch-C)
Channel to Ambient Thermal Resistance *2 Rth(ch-A)
2.46
°C/W
150
°C/W
Notes: *1 TC = 25°C, PW  10 s, Duty Cycle  1%
*2 Mounted on glass epoxy substrate of 40 mm  40 mm  1.6 mmt with 4% copper area (35 m)
*3 Tch(start) = 25°C, VDD = 50 V, RG = 25 , L = 100 H, VGS = 20 V  0 V
Caution: This product is an electrostatic-sensitive device due to low ESD capability and should be handled
with caution for electrostatic discharge. HBM (C = 100 pF, R = 1.5 k) 700 V.
R07DS0705EJ0100 Rev.1.00
Apr 17, 2012
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