NP20N10YDF_15 Datasheet, PDF (5/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP20N10YDF
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
140
120
100
80
VGS = 10 V
5.0 V
4.5 V
60
40
20
0
–100 –50 0
I_D = 10 A
Pulsed
50 100 150 200
T_ch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
100
10
V_DD = 50 V
V_GS = 10 V
R_G = 0 Ω
1
0.1
1
10
I_D - Drain Current - A
td(off)
td(on)
tr
tf
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
V_GS = 10 V
10
V_GS = 0 V
1
0.1
0
Pulsed
0.2 0.4 0.6 0.8 1.0
V_F(S-D) - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
Ciss
100
Coss
V_GS = 0 V
Crss
f = 1 MHz
10
0.01
0.1
1
10
100
V_DS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
100
90
80
70
60
50
40
30
20
10
0
0
VDD = 80 V
50 V
20 V
V_DS
5
10
15
10
9
8
V_GS
7
6
5
4
3
2
I_D = 20 A ¹
0
20
25
Q_G- Gate Charge - nC
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
di/dt = 100 A/μs
V_GS = 0 V
10
1
10
100
I_F - Drain Current - A
R07DS0705EJ0100 Rev.1.00
Apr 17, 2012
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