NP16N06QLK Datasheet, PDF (6/9 Pages) Renesas Technology Corp – Dual N-channel Power MOS FET

NP16N06QLK
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
60
Pulsed
50
40
30
20
10
V_GS=10V
ID=8.0A
0
-100 -50
0
50 100 150 200
T_ch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
1000
100
V_DD = 30V
V_GS=10V
R_G=0Ω
t_d(off)
td(on)
10
tr
tf
1
0.1
1
10
100
I_D - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
V_GS=10V
0V
10
1
0.1
0
Pulsed
0.2
0.4
0.6
0.8
1
V_F(S-D) - Source to Drain Voltage - V
R07DS1290EJ0101 Rev.1.01
Oct 27, 2015
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
Ciss
100
Coss
10
0.1
V_GS = 0V
f = 1.0MHz
1
Crss
10
100
V_DS - Drain to Source Voltage - V
DYNAMIC INPUT CHARACTERISTICS
50
10
V_DD= 48V
40
30V
8
12V
30
6
V_GS
20
4
10
0
0
2
V_DS
I_D=16A
0
2
4
6
8
10 12
Q_G - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
1
0.1
di/dt = 100A/μs
V_GS = 0V
1
10
100
I_F - Drain Current - A
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