NP16N06QLK Datasheet, PDF (4/9 Pages) Renesas Technology Corp – Dual N-channel Power MOS FET

NP16N06QLK
Typical Characteristics (T_A = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
120
100
80
60
40
20
0
0
50
100
150
200
T_C - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
ID(pulse)=32A
10
ID(DC)=16A
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
30
25
20
15
10
5
0
0
50
100
150
200
T_C - Case Temperature - °C
1
Power Dissipation Limited
0.1
T_C=25℃
Single Pulse
0.01
0.1
1
10
100
V_DS - Drain to Source Voltage – V
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Rth(ch-A) = 150°C/W
10
Rth(ch-C) = 5.95°C/W
1
0.1
100 μ
One channel operation
Single pulse
Mounted on a glass expoxy substrate of 40mm x 40mm 1.6 mmt with 4% Copper Area(35μm)
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
R07DS1290EJ0101 Rev.1.01
Oct 27, 2015
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