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| NP16N06QLK Datasheet, PDF (1/9 Pages) Renesas Technology Corp – Dual N-channel Power MOS FET | |||
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NP16N06QLK
60 V â 16 A â Dual N-channel Power MOS FET
Application: Automotive
Data Sheet
R07DS1290EJ0101
Rev.1.01
Oct 27, 2015
Description
NP16N06QLK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
⢠Super low on-state resistance
⯠RDS(on)1 = 39 mΩ MAX. (VGS = 10 V, ID = 8 A)
⯠RDS(on)2 = 60 mΩ MAX. (VGS = 4.5 V, ID = 4 A)
⢠Low Ciss: Ciss = 500 pF TYP. (VDS = 25 V)
⢠Designed for automotive application and AEC-Q101 qualified
⢠Small size package 8-pin HSON dual
Outline
Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred.
Ordering Information
Part No.
NP16N06QLK-E1-AY *1
NP16N06QLK-E2-AY *1
Lead Plating
Pure Sn (Tin)
Packing
Tape 2500 p/reel
Taping (E1 type)
Taping (E2 type)
Note: *1. Pb-free (This product does not contain Pb in the external electrode)
Package
8-pin HSON dual
R07DS1290EJ0101 Rev.1.01
Oct 27, 2015
Page 1 of 7
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