HD2_15 Datasheet, PDF (6/8 Pages) Renesas Technology Corp – on-chip resistor NPN silicon epitaxial transistor For mid-speed switching

HD2A4A
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
DC current gain
DC current gain
DC current gain
Collector saturation voltage
ICBO
hFE1 ^Note
hFE2 ^Note
hFE3 ^Note
VCE(sat)
Note
VCB = 40 V, IE = 0 A
VCE = 2.0 V, IC = 0.1 A
VCE = 2.0 V, IC = 0.5 A
VCE = 2.0 V, IC = 1.0 A
IC = 1.0 A, IB = 10 mA
Low level input voltage
E-to-B resistance
VIL ^Note
R2
VCE = 5.0 V, IC = 100 μA
Note PW ≤ 350 μs, duty cycle ≤ 2 %
HD2 SERIES
MIN.
TYP.
MAX.
Unit
100
nA
200
760
−
300
1010
−
200
830
−
0.25
0.4
V
0.3
V
7
10
13
kΩ
4
Data Sheet D18007EJ4V0DS