HD2_15 Datasheet, PDF (5/8 Pages) Renesas Technology Corp – on-chip resistor NPN silicon epitaxial transistor For mid-speed switching

HD2A4M
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
ICBO
hFE1 ^Note
hFE2 ^Note
hFE3 ^Note
VOL ^Note
VIL ^Note
VCB = 40 V, IE = 0 A
VCE = 2.0 V, IC = 0.1 A
VCE = 2.0 V, IC = 0.5 A
VCE = 2.0 V, IC = 1.0 A
VIN = 5.0 V, IC = 0.1 A
VCE = 5.0 V, IC = 100 μA
Input resistance
R1
E-to-B resistance
R2
Note PW ≤ 350 μs, duty cycle ≤ 2 %
HD2L2Q
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
ICBO
hFE1 ^Note
hFE2 ^Note
hFE3 ^Note
VOL ^Note
VIL ^Note
VCB = 40 V, IE = 0 A
VCE = 2.0 V, IC = 0.1 A
VCE = 2.0 V, IC = 0.5 A
VCE = 2.0 V, IC = 1.0 A
VIN = 5.0 V, IC = 1.0 A
VCE = 5.0 V, IC = 100 μA
Input resistance
R1
E-to-B resistance
R2
Note PW ≤ 350 μs, duty cycle ≤ 2 %
HD2F2Q
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
ICBO
hFE1 ^Note
hFE2 ^Note
hFE3 ^Note
VOL ^Note
VIL ^Note
VCB = 40 V, IE = 0 A
VCE = 2.0 V, IC = 0.1 A
VCE = 2.0 V, IC = 0.5 A
VCE = 2.0 V, IC = 1.0 A
VIN = 5.0 V, IC = 1.0 A
VCE = 5.0 V, IC = 100 μA
Input resistance
R1
E-to-B resistance
R2
Note PW ≤ 350 μs, duty cycle ≤ 2 %
HD2 SERIES
MIN.
TYP.
MAX.
Unit
100
nA
200
−
300
−
200
−
0.2
V
0.3
V
7
10
13
kΩ
7
10
13
kΩ
MIN.
TYP.
MAX.
Unit
100
nA
200
−
300
−
200
−
0.5
V
0.3
V
329
470
611
Ω
3.29
4.7
6.11
kΩ
MIN.
TYP.
MAX.
Unit
100
nA
100
−
300
−
200
−
0.5
V
0.3
V
154
220
286
Ω
1.54
2.2
2.86
kΩ
Data Sheet D18007EJ4V0DS
3