HD2_15 Datasheet, PDF (3/8 Pages) Renesas Technology Corp – on-chip resistor NPN silicon epitaxial transistor For mid-speed switching

DATA SHEET
COMPOUND TRANSISTOR
HD2 SERIES
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
FEATURES
• High current drives such as IC outputs and actuators available
• On-chip bias resistor
• The zener diode connected between the collector and base of the transistor
• Low power consumption during drive
PACKAGE DRAWING (UNIT: mm)
HD2 SERIES LISTS
Products
Marking
HD2A3M
LA
HD2F3P
LB
HD2L3N
LC
HD2A4M
LD
HD2L2Q
LE
HD2F2Q
LF
HD2A4A
LY
R1 (kΩ)
1.0
2.2
4.7
10
0.47
0.22
−
R2 (kΩ)
1.0
10
10
10
4.7
2.2
10
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60±10
V
Collector to emitter voltage
VCEO
60±10
V
Emitter to base voltage
VEBO
10
V
Collector current (DC)
IC(DC)
1.0
A
Collector current (Pulse)
IC(pulse) ^Note1
2.0
A
Base current (DC)
IB(DC)
20
mA
Total power dissipation
PT ^Note2
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Notes 1. PW ≤ 10 ms, duty cycle ≤ 50 %
2. When 0.7 mm × 16 cm² ceramic board is used
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18007EJ4V0DS00 (4th edition)
Date Published September 2006 NS CP(K)
Printed in Japan
2006