HD2_15 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – on-chip resistor NPN silicon epitaxial transistor For mid-speed switching

HD2A3M
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
ICBO
hFE1 ^Note
hFE2 ^Note
hFE3 ^Note
VOL ^Note
VIL ^Note
VCB = 40 V, IE = 0 A
VCE = 2.0 V, IC = 0.1 A
VCE = 2.0 V, IC = 0.5 A
VCE = 2.0 V, IC = 1.0 A
VIN = 5.0 V, IC = 0.5 A
VCE = 5.0 V, IC = 100 μA
Input resistance
R1
E-to-B resistance
R2
Note PW ≤ 350 μs, duty cycle ≤ 2 %
HD2F3P
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
ICBO
hFE1 ^Note
hFE2 ^Note
hFE3 ^Note
VOL ^Note
VIL ^Note
VCB = 40 V, IE = 0 A
VCE = 2.0 V, IC = 0.1 A
VCE = 2.0 V, IC = 0.5 A
VCE = 2.0 V, IC = 1.0 A
VIN = 5.0 V, IC = 0.3 A
VCE = 5.0 V, IC = 100 μA
Input resistance
R1
E-to-B resistance
R2
Note PW ≤ 350 μs, duty cycle ≤ 2 %
HD2L3N
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
ICBO
hFE1 ^Note
hFE2 ^Note
hFE3 ^Note
VOL ^Note
VIL ^Note
VCB = 40 V, IE = 0 A
VCE = 2.0 V, IC = 0.1 A
VCE = 2.0 V, IC = 0.5 A
VCE = 2.0 V, IC = 1.0 A
VIN = 5.0 V, IC = 0.2 A
VCE = 5.0 V, IC = 100 μA
Input resistance
R1
E-to-B resistance
R2
Note PW ≤ 350 μs, duty cycle ≤ 2 %
HD2 SERIES
MIN.
TYP.
MAX.
Unit
100
nA
80
−
200
−
200
−
0.35
V
0.3
V
0.7
1.0
1.3
kΩ
0.7
1.0
1.3
kΩ
MIN.
TYP.
MAX.
Unit
100
nA
200
−
300
−
200
−
0.12
0.3
V
0.3
V
1.54
2.2
2.86
kΩ
7
10
13
kΩ
MIN.
TYP.
MAX.
Unit
100
nA
200
−
300
−
200
−
0.2
V
0.3
V
3.29
4.7
6.11
kΩ
7
10
13
kΩ
2
Data Sheet D18007EJ4V0DS