HAT2087R_15 Datasheet, PDF (6/9 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

HAT2087R
Typical Capacitance vs.
Drain to Source Voltage (Typical)
10000
V_GS = 0
f = 1 MHz
Ta = 25°C
1000
Ciss
100
Coss
Crss
10
0
20 40
60 80 100
Drain to Source Voltage V_DS (V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
20
V_GS = 0 V
Pulse Test
16 ^{Ta = 25 °C}
12
8
4
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Dynamic Input Characteristics (Typical)
400
I_D = 2.5 A
Ta = 25 °C
16
V_GS
300
12
V_DS
200
V_DD = 200 V
100 V
8
50 V
100
4
V_DD = 200 V
100 V
50 V
0
0
8
16 24
32
40
Gate Charge Qg (nC)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
5
V_DS = 10 V
4
I_D = 10 mA _{1 mA}
3
0.1 mA
2
1
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
REJ03G1182-0300 Feb 06, 2009
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