HAT2087R_15 Datasheet, PDF (4/9 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

HAT2087R
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test Conditions
Drain to source breakdown voltage
Gate to source leak current
V _{(BR) DSS}
250
—
—
I_GSS
—
— ±0.1
Zero gate voltage drain current
I_DSS
—
—
1
Gate to source cutoff voltage
V_{GS (off)}
3.0
—
4.5
Static drain to source on state resistance R_{DS (on)}
— 0.24 0.31
Forward transfer admittance
|y_fs|
2.1 3.5
—
Input capacitance
Ciss
— 830 —
Output capacitance
Coss
— 105 —
Reverse transfer capacitance
Crss
—
21
—
V I_D = 10 mA, V_GS = 0
µA V_GS = ±30 V, V_DS = 0
µA V_DS = 250 V, V_GS = 0
V I_D = 1 mA, V_DS = 10 V
Ω
I_D = 1.25 A, V_GS = 10 V ^{Note 3}
S
I_D = 1.25 A, V_DS = 10 V ^{Note 3}
pF V_DS = 25 V
pF VGS = 0
pF f = 1 MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body to drain diode forward voltage
Body to drain diode reverse recovery
time
t_{d (on)}
t_r
t_{d (off)}
t_f
Qg
Qgs
Qgd
V_DF
t_rr
— 22.5 —
— 12.5 —
—
82
—
—
17
—
ns I_D = 1.25 A
ns VGS = 10 V
ns RL = 100 Ω
ns ^{Rg = 10 Ω}
—
23
—
nC V_DD = 200 V
—
3.2
—
nC VGS = 10 V
— 10.4 —
nC ID = 2.5 A
—
0.75 1.15
V
I_F = 2.5 A, V_GS = 0 ^{Note 3}
—
88
—
ns I_F = 2.5 A, V_GS = 0
di_F/dt = 100 A/µs
Note: 3. Pulse test
REJ03G1182-0300 Feb 06, 2009
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