HAT2087R_15 Datasheet, PDF (3/9 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

HAT2087R
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Low drive current
• High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
87 ⁶⁵
4
G
1234
5678
DDDD
SSS
123
REJ03G1182-0300
Rev.3.00
Feb 06, 2009
1, 2, 3
4
5, 6, 7, 8
Source
Gate
Drain
Absolute Maximum Ratings
Item
Symbol
Value
Drain to source voltage
V_DSS
250
Gate to source voltage
V_GSS
±30
Drain current
Drain peak current
I_D
2.5
I_{D (pulse)} ^{Note 1}
20
Body to drain diode reverse drain current
I_DR
2.5
Channel dissipation
Pch ^{Note 2}
2.5
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
REJ03G1182-0300 Feb 06, 2009
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