HAT2087R_15 Datasheet, PDF (5/9 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

HAT2087R
Main Characteristics
Maximum Safe Operation Area
100
10 µs
10
PW = 100 µs
1
Operation in this
0.1 area is limited by
R_DS(on)
0.01
Ta = 25°C
1 shot
0.001
0.1
1
10
100
1000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
20
V_DS = 10 V ^{−25°C}
Pulse Test
16
25°C
Tc = 75°C
12
8
4
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
0.8
Pulse Test
V_GS = 10 V
0.6
I_D = 2.5 A
0.4
1A
0.2
0
−25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Typical Output Characteristics
10
10 V
8
6V
5.5 V
Pulse Test
Ta = 25°C
6
5V
4
2
V_GS = 4.5 V
0
4
8
12 16 20
Drain to Source Voltage V_DS (V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
10
Pulse Test
V_GS = 10 V
Ta = 25°C
1
0.1
0.01
0.1
1
10
100
Drain Current I_D (A)
1000
Body-Drain Diode Reverse
Recovery Time (Typical)
100
di / dt = 100 A / µs
V_GS = 0, Ta = 25°C
10
1
10
100
Reverse Drain Current I_DR (A)
REJ03G1182-0300 Feb 06, 2009
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