HAF2026RJ_10 Datasheet, PDF (6/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAF2026RJ
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
10
Preliminary
1
0.1
0.01
0.001
D=1
0.5
0.2
0.1
0.05
0.02
0.01
1shot ^pulse
0.0001
10 μ 100 μ 1 m
θch-f(t) = γs (t) • θch - f
θch-f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
PDM
PW
T
D=
PW
T
10 m 100 m 1
10
Pulse Width PW (S)
100 1000 10000
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
10
D=1
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.001
1shot ^pulse
0.0001
10 μ 100 μ 1 m
θch-f(t) = γs (t) • θch - f
θch-f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
PDM
PW
T
D=
PW
T
10 m 100 m 1
10
Pulse Width PW (S)
100 1000 10000
Switching Time Test Circuit
Switching Time Waveform
Vin Monitor
D.U.T.
Vout
Monitor
R_L
Vin
5V
50 Ω
V_DD
= 30 V
Vin
Vout
10%
10%
90%
90%
90%
10%
td(on)
tr
td(off)
tf
R07DS0122EJ0300 Rev.3.00
Sep 01, 2010
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