HAF2026RJ_10 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

Preliminary Datasheet
HAF2026RJ
Silicon N Channel Power MOS FET
Power Switching
R07DS0122EJ0300
(Previous: REJ03G1255-0200)
Rev.3.00
Sep 01, 2010
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
 Logic level operation (5 to 6 V Gate drive)
 Built-in the over temperature shut-down circuit
 High endurance capability against to the shut-down circuit
 Latch type shut down operation (need 0 voltage recovery)
 Built-in the current limitation circuit
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 (FP-8DAV))
8 ^{7 65}
1 ²³⁴
DD
78
2
Current
G
Gate Resistor
Limitation
Circuit
Temperature
Sensing
Circuit
Latch
Circuit
Gate
Shut-down
Circuit
4
Current
G
Gate Resistor
Limitation
Circuit
Temperature
Sensing
Circuit
Latch
Circuit
Gate
Shut-down
Circuit
1
MOS1
S
MOS2
DD
56
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
3
S
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
V_DSS
60
Gate to source voltage
V_GSS
16
Gate to source voltage
Drain current
V_GSS
I_D
–2.5
0.6
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Cannel dissipation
Cannel dissipation
I_DR
I_APNote3
E_ARNote3
Pch^Note1
Pch^Note2
1
0.6
1.54
1
1.5
Cannel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
2. 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
3. Tc = 25C, Rg  50 
(Ta = 25°C)
Unit
V
V
V
A
A
A
mJ
W
W
C
C
R07DS0122EJ0300 Rev.3.00
Sep 01, 2010
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