HAF2026RJ_10 Datasheet, PDF (3/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAF2026RJ
Main Characteristics
Power vs. Temperature Derating
4.0
Test condition.
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm), (PW ≤ 10s)
3.0
2.0
1.0
1 _{D2rDivreivreOr pOepreartaiotinon}
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
2.0
Pulse Test
1.6
1.2 10 V
5V
0.8
V_GS = 3.5 V
0.4
0
2
4
6
8 10
Drain to Source Voltage V_DS (V)
Drain to Saturation Voltage vs.
Gate to Source Voltage
200
Pulse Test
160
120
80
I_D = 0.5 A
40
0.2 A
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
R07DS0122EJ0300 Rev.3.00
Sep 01, 2010
Preliminary
Maximum Safe Operation Area
10
Thermal shut down
operation area
3
1 ms
1
0.3
Operation
PW
= _{10 ms}
0.1
in this area
is limited by R_DS(on)
0.03 Ta = 25°C
1 shot Pulse
0.01 ^{1 Driver Operation}
0.01 0.03 0.1 0.3 1 3 10 30 100
Drain Source Voltage V_DS (V)
Note 6:
When using the glass epoxy board.
( FR4 40 x 40 x 1.6 mm)
Typical Transfer Characteristics
1.0
V_DS = 10 V
Pulse Test
0.8
0.6
0.4
0.2
0
75°C
25°C
1
2
Tc = -25°C
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source State Resistance
vs. Drain Current
500
V_GS = 5 V
200
100
V_GS = 10 V
50
20
Pulse Test
10
0.01 0.02 0.05 0.1 0.2 0.5 1 2
Drain Current I_D (A)
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