HAF2026RJ_10 Datasheet, PDF (2/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAF2026RJ
Preliminary
Typical Operation Characteristics
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Drain current (Current limitation)
Symbol
V_IH
V_IL
I_IH1
I_IH2
I_IL
I_IH(sd)1
I_IH(sd)2
Tsd
Vop
I_{D limt}
Min
3.5
—
—
—
—
—
—
—
3.5
0.6
Typ
—
—
—
—
—
0.53
0.23
175
—
—
Max
—
1.2
100
50
10
—
—
—
12
1.0
Unit
V
V
A
A
A
mA
mA
C
V
A
(Ta=25°C)
Test Conditions
Vi = 8 V, V_DS = 0
Vi = 3.5 V, V_DS = 0
Vi = 1.2 V, V_DS = 0
Vi = 8 V, V_DS = 0
Vi = 3.5 V, V_DS = 0
Cannel temperature
Vi = 5 V, V_DS = 3 V
Electrical Characteristics
Item
Symbol Min
Typ
Max
Unit
Drain current
I_D1
0.25
—
—
A
I_D2
—
—
10
mA
I_D3
0.6
—
1.0
A
Drain to source breakdown
V_(BR)DSS
60
—
—
V
voltage
Gate to source breakdown
V_(BR)GSS
16
—
—
V
voltage
V_(BR)GSS
–2.5
—
—
V
Gate to source leak current
I_GSS1
—
—
100
A
I_GSS2
—
—
50
A
I_GSS3
—
—
10
A
I_GSS4
—
—
–100
A
Input current (shut down)
I_GS(OP)1
—
0.53
—
mA
Zero gate voltage drain
current
I_GS(OP)2
—
0.23
—
mA
I_DSS1
—
—
10
A
I_DSS2
—
—
10
A
Gate to source cut off voltage V_GS(off)
1.4
—
2.5
V
Forward transfer admittance
|y_fs|
0.26
1.3
—
S
Static drain to source on state RDS(on)
—
200
300
m
resistance
R_DS(on)
—
150
210
m
Output capacitance
Coss
—
140
—
pF
Turn-on delay time
Rise time
Turn off delay time
Fall time
t_d(on)
—
2.9
—
s
t_r
—
11
—
s
t_d(off)
—
0.9
—
s
t_f
—
1
—
s
Body-drain diode forward
voltage
V_DF
—
0.9
—
V
Body-drain diode reverse
recovery time
t_rr
—
61
—
ns
Over load shut down
operation time ^note5
t_os1
—
85
—
ms
t_os2
—
30
—
ms
Notes: 4. Pulse test
5. Including the junction temperature rise of the over lorded condition.
(Ta = 25°C)
Test Conditions
V_GS = 3.5 V, V_DS = 2 V
V_GS = 1.2 V, V_DS = 2 V
V_GS = 5 V, V_DS = 3 V
I_D = 10 mA, V_GS = 0
I_G = 800 A, V_DS = 0
I_G = –100 A, V_DS = 0
V_GS = 8 V, V_DS = 0
V_GS = 3.5 V, V_DS = 0
V_GS = 1.2 V, V_DS = 0
V_GS = –2.4 V, V_DS = 0
V_GS = 8 V, V_DS = 0
V_GS = 3.5 V, V_DS = 0
V_DS = 60 V, V_GS = 0
V_DS = 48 V, V_GS = 0, Ta = 125C
V_DS = 10 V, I_D = 1 mA
I_D = 0.5 A, V_DS = 10 V^Note4
I_D = 0.5 A, V_GS = 5 V^Note4
I_D = 0.5 A, V_GS = 10 V^Note4
V_DS = 10 V, V_GS = 0, f = 1MHz
V_GS = 5 V, I_D= 0.5 A, R_L = 60 
I_F = 1 A, V_GS = 0
I_F = 1 A, V_GS = 0, di_F/dt = 50 A/s
V_GS = 5 V, V_DD = 16 V
V_GS = 5 V, V_DD = 24 V
R07DS0122EJ0300 Rev.3.00
Sep 01, 2010
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