BB505C Datasheet, PDF (6/9 Pages) Renesas Technology Corp – Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB505C
S₁₁ Parameter vs. Frequency
.8 ¹
.6
.4
1.5
2
3
4
.2
5
10
0
.2 .4 .6 .8 1 1.5 2 3 4 5 10
-10
-.2
-5
-4
-3
-.4
-2
-.6
-.8 _-1
-1.5
Condition: V_DS = 5 V, V_G1 = 5 V, V_G2S = 4 V
R_G = 220 kΩ, Zo = 50 Ω
50 to 1000 MHz (50 MHz Step)
S₂₁ Parameter vs. Frequency
90°
Scale: 1 / div.
120°
60°
150°
30°
180°
0°
-150°
-30°
-120°
-60°
-90°
Condition: V_DS = 5 V, V_G1 = 5 V, V_G2S = 4 V
R_G = 220 kΩ, Zo = 50 Ω
50 to 1000 MHz (50 MHz Step)
S₁₂ Parameter vs. Frequency
90° ^{Scale: 0.02 / div.}
120°
60°
150°
30°
180°
0°
-150°
-30°
-120°
-60°
-90°
Condition: V_DS = 5 V, V_G1 = 5 V, V_G2S = 4 V
R_G = 220 kΩ, Zo = 50 Ω
50 to 1000 MHz (50 MHz Step)
S₂₂ Parameter vs. Frequency
.8 ¹
.6
1.5
2
.4
3
4
.2
5
10
0
.2 .4 .6 .8 1 1.5 2 3 4 5 10
-10
-.2
-5
-4
-.4
-.6
-.8 _-1
-3
-2
-1.5
Condition: V_DS = 5 V, V_G1 = 5 V, V_G2S = 4 V
R_G = 220 kΩ, Zo = 50 Ω
50 to 1000 MHz (50 MHz Step)
Rev.1.00, Jun.14.2004, page 6 of 8